? semiconductor components industries, llc, 2014 august, 2014 ? rev. 15 1 publication order number: mjd47/d mjd47, njvmjd47t4g, mjd50, NJVMJD50T4G high voltage power transistors dpak for surface mount applications designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. features ? lead formed for surface mount applications in plastic sleeves (no suffix) ? electrically similar to popular tip47, and tip50 ? epoxy meets ul 94 v?0 @ 0.125 in ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free and are rohs compliant maximum ratings rating symbol max unit collector?emitter voltage mjd47, njvmjd47t4g mjd50, NJVMJD50T4G v ceo 250 400 vdc collector?base voltage mjd47, njvmjd47t4g mjd50, NJVMJD50T4G v cb 350 500 vdc emitter?base voltage v eb 5 vdc collector current ? continuous i c 1 adc collector current ? peak i cm 2 adc base current i b 0.6 adc total power dissipation @ t c = 25 c derate above 25 c p d 15 0.12 w w/ c total power dissipation (note 1) @ t a = 25 c derate above 25 c p d 1.56 0.0125 w w/ c operating and storage junction temperature range t j , t stg ?65 to +150 c esd ? human body model hbm 3b v esd ? machine model mm c v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. these ratings are applicable when surface mounted on the minimum pad sizes recommended. npn silicon power transistors 1 ampere 250, 400 volts, 15 watts dpak case 369c style 1 marking diagram a = assembly location y = year ww = work week jxx = device code xx = 47 or 50 g = pb?free package ayww jxxg http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information 3 2 1 4 1 base 3 emitter collector 2, 4
mjd47, njvmjd47t4g, mjd50, NJVMJD50T4G http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance junction?to?case r jc 8.33 c/w thermal resistance junction?to?ambient (note 2) r ja 80 c/w lead temperature for soldering purpose t l 260 c 2. these ratings are applicable when surface mounted on the minimum pad sizes recommended. ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????? ?????????????????? characteristic ????? ????? ????? ????? ????? ????? ???? ???? ????????????????????????????????? ????????????????????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? collector?emitter sustaining voltage (note 3) (i c = 30 madc, i b = 0) mjd47, njvmjd47t4g mjd50, NJVMJD50T4G ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ???? ???? ???? ???? ?????????????????? ?????????????????? ?????????????????? ?????????????????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ???? ???? ???? ???? ?????????????????? ?????????????????? ?????????????????? ?????????????????? ?????????????????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ???? ???? ???? ???? ???? ?????????????????? ?????????????????? ????? ????? ????? ????? ????? ????? ???? ???? ????????????????????????????????? ????????????????????????????????? on characteristics (note 3) ?????????????????? ?????????????????? ?????????????????? ?????????????????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ???? ???? ???? ???? ?????????????????? ?????????????????? ????? ????? ????? ????? ????? ????? ???? ???? ?????????????????? ?????????????????? ?????????????????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ???? ???? ???? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????? ?????????????????? ?????????????????? current gain ? bandwidth product (i c = 0.2 adc, v ce = 10 vdc, f = 2 mhz) ????? ????? ????? ????? ????? ????? ????? ????? ????? ???? ???? ???? ?????????????????? ?????????????????? ????? ????? ????? ????? ????? ????? ???? ???? 300 s, duty cycle 2%.
mjd47, njvmjd47t4g, mjd50, NJVMJD50T4G http://onsemi.com 3 25 25 figure 1. power derating t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) figure 2. switching time equivalent circuit approx +11 v r b -4 v t 1 scope v cc r c 51 r b and r c varied to obtain desired current levels. 2.5 0 2 1.5 1 0.5 t a t c t c duty cycle 2% approx -9 v t 1 7 ns 10 < t 2 < 500 s t 3 < 15 ns v in 0 c jd << c eb v in t 2 t 3 approx +11 v v in turn-on pulse t a (surface mount) v eb(off) turn-off pulse typical characteristics 0.02 i c , collector current (amps) 1 0.8 v, voltage (volts) 1.4 1.2 0.4 0 0.6 0.2 v be(sat) @ i c /i b = 5 v be(on) @ v ce = 4 v v ce(sat) @ i c /i b = 5 0.02 i c , collector current (amps) 2 0.06 0.2 2 40 10 100 h fe , dc current gain v ce = 10 v t j = 150 c 60 0.1 0.6 25 c -55 c 20 0.04 0.4 1 200 4 6 figure 3. dc current gain t, time (ms) 1 0.01 1 k 0.3 0.2 0.07 r(t), transient thermal r jc(t) = r(t) r jc r jc = 8.33 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 resistance (normalized) figure 4. ?on? voltages 0.7 figure 5. thermal response 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.06 0.2 2 0.1 0.6 0.04 0.4 1 0.2 single pulse d = 0.5 0.05 t j = 25 c 0.1 0.02 0.01
mjd47, njvmjd47t4g, mjd50, NJVMJD50T4G http://onsemi.com 4 i c , collector current (amp) 5 v ce , collector-emitter voltage (volts) 0.005 500 1 0.2 0.05 0.02 second breakdown limit thermal limit @ 25 c wire bond limit 20 200 10 t c 25 c 100 s 1ms dc 0.01 0.1 0.5 2 5 figure 6. active region safe operating area 100 50 300 curves apply below rated v ceo mjd50 mjd47 500 s there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 5. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.02 0.2 2 0.1 0.05 0.5 1 5 i c , collector current (amps) t j = 25 c v cc = 200 v i c /i b = 5 t, time (s) 2 1 0.5 0.2 0.1 0.05 figure 7. turn?on time figure 8. turn-off time i c , collector current (amps) 0.01 t, time (s) 1 0.5 0.1 0.05 0.02 0.02 0.2 2 0.1 0.05 0.5 1 t r t d t s t f t j = 25 c v cc = 200 v i c /i b = 5 0.2
mjd47, njvmjd47t4g, mjd50, NJVMJD50T4G http://onsemi.com 5 ordering information device package shipping ? mjd47g 369c (pb?free) 75 units / rail mjd47t4g 369c (pb?free) 2,500 / tape & reel njvmjd47t4g* 369c (pb?free) 2,500 / tape & reel mjd50g 369c (pb?free) 75 units / rail mjd50t4g 369c (pb?free) 2,500 / tape & reel NJVMJD50T4G* 369c (pb?free) 2,500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. *njv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable.
mjd47, njvmjd47t4g, mjd50, NJVMJD50T4G http://onsemi.com 6 package dimensions dpak case 369c issue d style 1: pin 1. base 2. collector 3. emitter 4. collector 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mjd47/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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